| 发明名称 |
Method of making a seed layer for a nickel oxide pinning layer for increasing the magnetoresistance of a spin valve sensor |
| 摘要 |
A bottom spin valve sensor employs a seed layer for a nickel oxide (NiO) antiferromagnetic pinning layer for the purpose of increasing magnetoresistance of the sensor (dR/R). The spin valve sensor can be a simple spin valve or an antiparallel (AP) spin valve sensor. In the preferred embodiment the seed layer is tantalum oxide Ta<HIL><PDAT>y</SB><PDAT>O<HIL><PDAT>x </SB><PDAT>or copper (Cu).</PTEXT> |
| 申请公布号 |
US6631549(B1) |
申请公布日期 |
2003.10.14 |
| 申请号 |
US20000721852 |
申请日期 |
2000.11.24 |
| 申请人 |
HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B.V. |
发明人 |
PINARBASI MUSTAFA |
| 分类号 |
G01R33/09;G11B5/39;H01F10/14;H01F10/30;H01F10/32;H01L43/08;H01L43/12;(IPC1-7):G11B5/127;H04R31/00 |
主分类号 |
G01R33/09 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
