| 摘要 |
PURPOSE:To obtain a film with little loss by growing a film having the compsn. of aluminum garnet crystal (YAG) in which part of Al is replaced with Ga or the like on a specified substrate so that lattice matching between the substrate and the film is obtd. CONSTITUTION:A YAG crystal substrate (A) expressed by formula is selected from YAG crystal substrates and the like. In formula, R is Y, Gd or one of other tervalent rare earth elements. Part of structural elements of YAG crystal except for O2 is replaced with one or more tervalent elements or with combination of two or more kinds of elements except for tervalent elements so that the combination as a whole has three valences. Thus, a substd. garnet crystal substrate (B) is obtd. Then a film of a YAG crystal or substd. garnet crystal in which part of Al is replaced with Ga and part of R is replaced with one or more elements selected from Lu, Yb, Tm, Er is grown on the substrate A or B to obtain the aluminum garnet crystal film. |
