发明名称 Nanolaminated thin film circuitry materials
摘要 Nanolaminates are formed by alternating deposition, e.g., by combustion chemical vapor deposition (CCVD), layers of resistive material and layers of dielectric material. Outer resistive material layers are patterned to form discrete patches of resistive material. Electrical pathways between opposed patches of resistive material on opposite sides of the laminate act as capacitors. Electrical pathways horizontally through resistive material layers, which may be connected by via plated holes, act as resistors.</PTEXT>
申请公布号 US6632591(B2) 申请公布日期 2003.10.14
申请号 US20010781462 申请日期 2001.02.12
申请人 HUNT ANDREW T.;LIN WEN-YI;CARPENTER RICHARD W. 发明人 HUNT ANDREW T.;LIN WEN-YI;CARPENTER RICHARD W.
分类号 B32B7/02;H01C13/00;H01G4/10;H01G4/30;H01G4/33;H01G4/40;H05K1/16;H05K3/46;(IPC1-7):G03F7/00 主分类号 B32B7/02
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