| 摘要 |
PURPOSE: A method for forming a metal line of a semiconductor device is provided to be capable of improving thickness uniformity by filling an ARC(Anti-Reflective Coating) layer into a via hole while controlling RPM(Revolution Per Minute) of a wafer. CONSTITUTION: After sequentially depositing a barrier layer(120), an interlayer dielectric(130) and a hard mask(140) on a lower layer(110), a via hole is formed by patterning the stacked structure. An ARC layer(170) is entirely filled into the via hole by varying the RPM of a wafer at least three times. After forming a photoresist pattern(180) on the resultant structure, the ARC layer, the hard mask and the interlayer dielectric are partially etched by using the photoresist pattern(180) as a mask. After removing the photoresist pattern, a dual damascene pattern is formed by removing the ARC layer and the barrier layer.
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