| 摘要 |
PROBLEM TO BE SOLVED: To provide a capacitor having superior various types of characteristics, and to provide a ferroelectric memory and an electronic device. SOLUTION: The capacitor 1 shown in Fig. 1 comprises a recording layer 4, sandwiched between an upper electrode 3 and a lower electrode 2. The layer 4 contains a metal oxide of a perovskite structure, becoming an antiferroelectric state directly under a Curie temperature or a ferroelectric material in a temperature range of -20 to 100°C, but not showing a structure phase transfer in the previous temperature range or a metal oxide of a perovskite structure which does not show a structure phase transfer in the previous temperature range becoming an antiferroelectric state directly under a Curie temperature or a ferroelectric material in a temperature range of -20 to 100°C and a metal oxide of another perovskite structure different from the metal oxide of the perovskite structure, different from the metal oxide of the perovskite structure which does not show the structure phase transfer in the previous temperature range. COPYRIGHT: (C)2004,JPO
|
