| 摘要 |
PROBLEM TO BE SOLVED: To detect a standby-current-defective but normally-operable memory cell and repair standby current abnormality. SOLUTION: Memory power supply lines (MVDLa, MVDLb) are disconnected from a power supply node by using switch gates (15a, 15b) in a test operation, Voltages of the memory power supply lines are detected using detection holding circuits (16a, 16b). When the detected voltage is lower than a predetermined value, the corresponding memory power supply line is driven to a ground voltage level. Thereby, a standby-current-defective but normally-operable memory cell is forced to an operation-defective state. COPYRIGHT: (C)2004,JPO
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