发明名称 METHOD OF MANUFACTURING MASK AND METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To shorten the manufacturing time of a mask. <P>SOLUTION: In a defect inspection of a mask RM having a light-shielding body composed of a resist film, the presence or absence of defects such as bur and film loss of a resist pattern on the mask RM, and foreign matters, or the like is inspected by reading optical information on either or both of reflection light and transmission light with respect to inspection light irradiated to the mask RM by the use of a foreign-matter inspection system CIS. More specifically, in the inspection of the mask RM, it is possible to perform the defect inspection without performing a comparison inspection that requires a great amount of measuring time and advanced techniques. Therefore, the inspection process of the mask RM can be simplified, and also the inspection time of the mask can be shortened. <P>COPYRIGHT: (C)2004,JPO</p>
申请公布号 JP2003287875(A) 申请公布日期 2003.10.10
申请号 JP20020202071 申请日期 2002.07.11
申请人 HITACHI LTD;DAINIPPON PRINTING CO LTD 发明人 HASEGAWA NORIO;HAYANO KATSUYA;KUBO SHINJI;KOIZUMI YASUHIRO;TAKATANI HIRONOBU;HOGEN MORIHISA
分类号 G03F1/50;G03F1/56;G03F1/62;G03F1/72;G03F1/84;G03F7/20;H01L21/027;(IPC1-7):G03F1/08;G03F1/14 主分类号 G03F1/50
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