| 摘要 |
<p>A plasma processing device able to positively enhance a process-gas exhaust efficiency in a processing region and restrict plasma leaking. A magnetron-system, parallel-plate plasma processing device (30) has a processing container (3) that comprises an upper electrode (1), at the top thereof, having many gas inlet holes, a lower electrode (2), at the bottom thereof, having at the top thereof a mounting surface to mount thereon a semiconductor wafer (W) to be processed, and a separator (50) for separating the inside of the processing container (3) into a processing region (8) and an exhaust region (9) at the top position of the lower electrode (2). The separator (50) has a plurality of gas passage holes (5a) to establish communication between the processing region (8) and the exhaust region (9) when exhausting the process gas in the former (8) to the latter (9), and consists of a non-conductive member (5b). A conductive member (5c) is disposed on a gas passage-side surface (20b) facing the gas passage holes (5a). A voltage V is applied by a power supply (21) to the conductive member (5c) so that the gas passage-side surface (20b) is at a potential higher than that of a processing-region surface (20a).</p> |
