Method of fabricating semiconductor device having metal conducting layer

摘要

A method of manufacturing a semiconductor device having a metal conducting layer is provided. A metal conducting layer pattern having the metal conducting layer is formed on a semiconductor substrate. A portion of the metal conducting layer is partially exposed on the semiconductor substrate. The semiconductor substrate having the metal conducting layer pattern is loaded into a reaction chamber. A first silicon source gas is flowed into the reaction chamber. A silicon oxide layer is formed on the semiconductor substrate having the metal conducting layer pattern by supplying a second silicon source gas and an oxygen source gas into the reaction chamber.