发明名称 |
Production of integrated device comprises forming guard ring pattern to enclose fuse line and partially etching second insulating layer to form via hole outside fuse portion of integrated circuit device |
摘要 |
<p>The production of an integrated circuit device comprises forming a guard ring pattern on a first insulating layer to enclose a fuse line; and partially etching a second insulating layer to remove a portion of the second insulating layer in the fuse portion of the integrated circuit device enclosed by a guard ring pattern exposing a portion of the first insulating layer and to form a via hole outside the fuse portion of the integrated circuit device. The production of an integrated circuit device comprises forming a fuse line (147c) at a fuse portion of the integrated circuit device; forming a first insulating layer on the fuse line; forming a guard ring pattern on the first insulating layer to enclose the fuse line; forming a second insulating layer on the guard ring pattern and the first insulating layer; and partially etching the second insulating layer to remove a portion of the second insulating layer in the fuse portion of the integrated circuit device enclosed by the guard ring pattern exposing a portion of the first insulating layer and to form a via hole outside the fuse portion of the integrated circuit device. An independent claim is also included for a fuse box of an integrated circuit device comprising a fuse line at a fuse portion of the integrated circuit device; a first insulating layer on the fuse line; a first guard ring pattern that encloses the fuse line on the first insulating layer; a second insulating layer on the first guard ring pattern and the first insulating layer; and a second guard ring pattern that encloses the fuse line on the second insulating layer; and a passivation layer on the second insulating layer and the second guard ring pattern, wherein the passivation layer defines at least a portion of a fuse opening having a sidewall in the first and second insulating layers and the passivation layer extends on the sidewall of the fuse opening to at least the first insulating layer.</p> |
申请公布号 |
DE10310329(A1) |
申请公布日期 |
2003.10.09 |
申请号 |
DE2003110329 |
申请日期 |
2003.03.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
BAE, MYOUNG-KWANG |
分类号 |
H01L23/52;H01L21/3205;H01L21/82;H01L21/8242;H01L23/525;H01L23/58;H01L27/105;H01L27/108;(IPC1-7):H01L21/768 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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