发明名称 |
Process for making a silicon-on-insulator ledge and structures achieved thereby |
摘要 |
A process of making a partial silicon-on-insulator ledge is disclosed. A deep implantation region is created in a substrate. During a lateral cavity etch, the deep implantation region resists etching. The lateral cavity etch acts to partially isolate an active area above the deep implantation region. The deep implantation region is formed at various process stages according to embodiments. An active device is also disclosed that is achieved by the process. A system is also disclosed that uses the active device.
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申请公布号 |
US2003190766(A1) |
申请公布日期 |
2003.10.09 |
申请号 |
US20020118569 |
申请日期 |
2002.04.08 |
申请人 |
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发明人 |
GONZALEZ FERNANDO;MOULI CHANDRA;JONES LYLE |
分类号 |
H01L21/265;H01L21/762;H01L21/764;H01L21/8242;H01L27/02;H01L27/108;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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