发明名称 Method and apparatus for correcting the offset induced by field effect transistor photo-conductive effects in a solid state X-ray detector
摘要 A method and apparatus for correcting the offset induced by Field Effect Transistor (FET) photo-conductive effects in solid state x-ray detectors includes dedicating rows at the beginning and end of an x-ray detector scan. The dedicated rows may be used to measure the "signal" induced by the photo-conductivity of FET switches in solid state x-ray detectors. Since the signal induced by FET photo-conductivity decays over time, the measurements taken at the beginning and end of a detector scan may be used to predict by interpolation the amount of signal contributed by photo-conductive induced offset for each row of the detector scan on a column by column basis.
申请公布号 US2003191387(A1) 申请公布日期 2003.10.09
申请号 US20030409343 申请日期 2003.04.08
申请人 PETRICK SCOTT WILLIAM;BOUDRY JOHN MOORE;CRONCE RICHARD GORDON;PERRY DOUGLAS I. 发明人 PETRICK SCOTT WILLIAM;BOUDRY JOHN MOORE;CRONCE RICHARD GORDON;PERRY DOUGLAS I.
分类号 G01T1/20;A61B6/00;A61B6/03;H04N5/217;H04N5/32;(IPC1-7):A61B5/05 主分类号 G01T1/20
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