| 摘要 |
The present invention relates to a method for forming a titanium/titanium nitride barrier layer applied in a contact/via opening with a high aspect ratio. After forming a titanium layer by ion metal plasma and before depositing a titanium nitride layer by using metal organic chemical vapor deposition, a gas-stable step is performed for adjusting pressure by supplying a hydrogen gas, a helium gas, a reactive source and a carrier gas. By using hydrogen gas in the gas-stable step before depositing the titanium nitride layer, the RC delay and reflection index of the resultant barrier layer are substantially reduced, thus increasing the performance of the contact/via plug and the device.
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