发明名称 |
Semiconductor built -in millimeter-wave band module |
摘要 |
A semiconductor built-in millimeter-wave band module includes: an insulating substrate made of a mixture containing an inorganic filler and a thermosetting resin; a high thermal conductivity substrate made of a dielectric material having thermal conductivity higher than the insulating substrate and laminated on one surface of the insulating substrate; a plurality of wiring patterns formed on the high thermal conductivity substrate and the insulating substrate; a semiconductor device operating at millimeter-wave band, which is arranged inside of the insulating substrate, is packaged on the high thermal conductivity substrate in a face-up manner, and is connected electrically with the wiring patterns; and a distributed constant circuit element and an active element provided on the semiconductor device. In this module, a void is provided inside of the insulating substrate and in the vicinity of a surface of the distributed constant circuit element and the active element. With this configuration, heat from the semiconductor device operating at a millimeter-wave band can be dissipated effectively and the semiconductor and other circuit components can be packaged with high density.
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申请公布号 |
US2003189246(A1) |
申请公布日期 |
2003.10.09 |
申请号 |
US20030405524 |
申请日期 |
2003.04.02 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
IWAKI HIDEKI;TAGUCHI YUTAKA;OGURA TETSUYOSI;SUGAYA YASUHIRO;ASAHI TOSHIYUKI;NISHIYAMA TOUSAKU;IDOGAWA YOSHINOBU |
分类号 |
H01L21/48;H01L21/56;H01L23/10;H01L23/12;H01L23/34;H01L23/552;H01L23/66;H01L25/00;H05K1/18;(IPC1-7):H01L23/10 |
主分类号 |
H01L21/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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