发明名称 |
Multi-level flash memory with temperature compensation |
摘要 |
A multi-level semiconductor memory device preferably includes a plurality of wordlines connected to memory cells configured to store multi-level data. A first circuit supplies a temperature-responsive voltage to a selected wordline in order to read a state of a selected memory cell. A second circuit supplies a predetermined voltage to non-selected wordlines. The first circuit preferably includes a semiconductor element that varies its resistance in accordance with temperature. Reliable program-verifying and reading functions are preferably provided despite migration of threshold voltage distribution profiles due to temperature variations.
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申请公布号 |
US2003189856(A1) |
申请公布日期 |
2003.10.09 |
申请号 |
US20020300485 |
申请日期 |
2002.11.19 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO TAE-HEE;LEE YEONG-TAEK |
分类号 |
G11C8/08;G11C11/56;G11C16/02;G11C16/04;G11C16/06;(IPC1-7):G11C11/34 |
主分类号 |
G11C8/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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