METHOD FOR MANUFACTURING SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor memory device is provided to be capable of reducing the contact resistance of a capacitor and preventing attack of oxygen into an upper electrode when depositing a capping layer. CONSTITUTION: A method comprises the following steps of forming a capacitor(150) composed of a lower electrode(120), a dielectric film(130) and an upper electrode(140), forming a capping layer on the capacitor, and crystallizing the dielectric film(130). The step of forming the capping layer further includes the following sub-steps of preparing the deposition conditions, depositing the capping layer by supplying reaction sources, and purging the non-reaction gases.