发明名称 Porous silicon with uniform pore size distribution
摘要 To make the pore size distribution of a porous layer uniform, a surface comprising atom steps and terraces is formed on the surface of a silicon base material and made porous without eliminating the steps and terraces, and then a nonporous semiconductor single-crystal film is formed thereon. <IMAGE> <IMAGE> <IMAGE> <IMAGE>
申请公布号 EP0975012(A3) 申请公布日期 2003.10.08
申请号 EP19990305810 申请日期 1999.07.22
申请人 CANON KABUSHIKI KAISHA 发明人 SATO, NOBUHIKO;MATSUMURA, SATOSHI
分类号 H01L21/34;H01L21/3063;H01L21/762 主分类号 H01L21/34
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