发明名称 |
Porous silicon with uniform pore size distribution |
摘要 |
To make the pore size distribution of a porous layer uniform, a surface comprising atom steps and terraces is formed on the surface of a silicon base material and made porous without eliminating the steps and terraces, and then a nonporous semiconductor single-crystal film is formed thereon. <IMAGE> <IMAGE> <IMAGE> <IMAGE> |
申请公布号 |
EP0975012(A3) |
申请公布日期 |
2003.10.08 |
申请号 |
EP19990305810 |
申请日期 |
1999.07.22 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
SATO, NOBUHIKO;MATSUMURA, SATOSHI |
分类号 |
H01L21/34;H01L21/3063;H01L21/762 |
主分类号 |
H01L21/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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