发明名称 |
Multi-level flash EEPROM cell and method of manufacture thereof |
摘要 |
A multi-level EEPROM cell and a method of manufacture thereof are provided so as to improve a program characteristic of the multi-level cell. For the purpose, the multi-level flash EEPROM cell includes a floating gate formed as being electrically separated from a silicon substrate by an underlying tunnel oxide layer, a first dielectric layer formed over the top of the floating gate, a first control gate formed on the floating gate as being electrically separated from the floating gate by the first dielectric layer, a second dielectric layer formed on the sidewall and top of the first control gate, a second control gate formed on the sidewall and top of the first control gate as being electrically separated from the first control gate by the second dielectric layer, and a source and drain formed in the substrate as being self-aligned with both edges of the second control gate.
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申请公布号 |
US6630709(B2) |
申请公布日期 |
2003.10.07 |
申请号 |
US20000739401 |
申请日期 |
2000.12.19 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
CHANG SANG-HOAN;KIM KI-SEOG;LEE KEUN-WOO;PARK SUNG-KEE |
分类号 |
H01L21/8247;G11C11/56;G11C16/04;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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