发明名称 CRYO PUMP FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PURPOSE: A cryo pump for manufacturing a semiconductor device is provided to be capable of breaking contaminated gas from being re-flowed into the cryo pump and uniformly supplying purge gas by using a ring type purge guide. CONSTITUTION: A cryo pump(200) is provided with a pump case(210) installed with an air exhaust pipe, an inner barrel(220) having a purge gas inflow port(222), installed in the pump case, a gas condensation part installed at the inner barrel for condensing and adsorbing gas molecules, a cooling unit(230) for cooling the gas condensation part to a cryogenic state, and a recycling part for removing the condensed gas molecules by supplying purge gas(70) to the purge gas inflow port. At this time, the recycling part includes a purge gas supply unit(282) for supplying the purge gas, a purge gas supply pipe(284) connected with the purge gas supply unit for flowing the purge gas, and a purge gas nozzle unit. Preferably, a purge guide(226) is installed at the bottom portion of the inner barrel for uniformly flowing the purge gas into the inner barrel.
申请公布号 KR20030077837(A) 申请公布日期 2003.10.04
申请号 KR20020016785 申请日期 2002.03.27
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, HAN SEONG;KIM, CHANG JIN;YANG, YEONG SU
分类号 H01L21/02;(IPC1-7):H01L21/02 主分类号 H01L21/02
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