| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device which can be reduced in size and in which each transistor can be improved in performance. <P>SOLUTION: A first conductive film is provided on a substrate in a cell region and a logic circuit region. A first insulating film is provided on the first conductive film in the cell region and the logic circuit region near the boundary between the cell region and logic circuit region. In addition, a plurality of gate structures each having a gate electrode and an insulating layer, both of which are separated from each other and respectively derived from the first conductive film and first insulating film, is provided in the cell region. A second gate structure having a gate electrode derived from the first conductive film is provided in the logic circuit region. Moreover, first and second source-drain diffusion layers are formed adjacently to the first and the second gate structures on the surface of the substrate. A first plug connected to the first source-drain diffusion layer and constituted of polycrystalline silicon and a second plug connected to the second source-drain diffusion layer and constituted of a metallic material are provided between the first gate structures. <P>COPYRIGHT: (C)2004,JPO |
