| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device in which high integration is achieved and high speed operation can be performed. SOLUTION: This semiconductor memory device has a plurality of main word lines MWL extending and crossing a memory block 80, and four sub-word lines SWL1-SWL4 arranged in each of the memory block and belonging to the plurality of main word lines MWL. A potential of one sub-word selection line (one line of PDCXZ1-4) made active in a selected block 80 is boosted by the prescribed period. This boosting operation is performed by turning off a switching element T1 supplying an active potential Vdd to a first terminal of a capacitor C1 for boosting and finishing charge to the capacitor C1 for boosting, and varying a potential of a second terminal of the capacitor C1 for boosting, by a boosting control circuit 140. Consequently, a potential of the first terminal of the capacitor C1 for boosting is boosted, and a line VLINE1 to be boosted connected to the first terminal is boosted. COPYRIGHT: (C)2004,JPO
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