发明名称 SHAPE SIMULATION METHOD, SHAPE SIMULATION EQUIPMENT, PROGRAM, AND RECORDING MEDIUM
摘要 PROBLEM TO BE SOLVED: To perform shape simulation with high accuracy even when a gap is formed caused by the non-recognition of a thin material in an analysis area or contacts of at least three different materials in the analysis area. SOLUTION: The analysis area is divided into small cells each having a material volumetric fraction (step S1). The material in each cell is determined (step S2). The surface of the material in each cell is given on an equivalent face with a material volumetric fraction of 0.5 (step S3). In a designated cell, a region with a gap is located (step S4). The material having the gap is determined (step S5). In a step S5, a material having no interface has higher priority. If each material has an interface, a material with a greatest value calculated by subtracting the volumetric fraction of the area formed by the interface from the material volumetric fraction is regarded as a material having the gap. Steps S2 through S5 are repeated to update the material surface in the cell every minute time until reading a specified time passes. COPYRIGHT: (C)2004,JPO
申请公布号 JP2003282549(A) 申请公布日期 2003.10.03
申请号 JP20020086610 申请日期 2002.03.26
申请人 SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC 发明人 FUJINAGA MASATO
分类号 H01L21/3065;H01L21/00;H01L21/205;(IPC1-7):H01L21/306 主分类号 H01L21/3065
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