发明名称 |
SHAPE SIMULATION METHOD, SHAPE SIMULATION EQUIPMENT, PROGRAM, AND RECORDING MEDIUM |
摘要 |
PROBLEM TO BE SOLVED: To perform shape simulation with high accuracy even when a gap is formed caused by the non-recognition of a thin material in an analysis area or contacts of at least three different materials in the analysis area. SOLUTION: The analysis area is divided into small cells each having a material volumetric fraction (step S1). The material in each cell is determined (step S2). The surface of the material in each cell is given on an equivalent face with a material volumetric fraction of 0.5 (step S3). In a designated cell, a region with a gap is located (step S4). The material having the gap is determined (step S5). In a step S5, a material having no interface has higher priority. If each material has an interface, a material with a greatest value calculated by subtracting the volumetric fraction of the area formed by the interface from the material volumetric fraction is regarded as a material having the gap. Steps S2 through S5 are repeated to update the material surface in the cell every minute time until reading a specified time passes. COPYRIGHT: (C)2004,JPO
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申请公布号 |
JP2003282549(A) |
申请公布日期 |
2003.10.03 |
申请号 |
JP20020086610 |
申请日期 |
2002.03.26 |
申请人 |
SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC |
发明人 |
FUJINAGA MASATO |
分类号 |
H01L21/3065;H01L21/00;H01L21/205;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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地址 |
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