| 摘要 |
PROBLEM TO BE SOLVED: To provide an image sensor having a structure of compensating a reduction in optical sensitivity due to a narrower area of a photodiode than a unit pixel cell, and to provide its manufacturing method. SOLUTION: There are provided a first conductive type semiconductor layer; a first diffusion layer in which second conductive type impurities are ion- implanted into an inside of the first conductive type semiconductor layer with energy different from each other to form by lamination, a first layer near a surface of the first conductive type semiconductor layer, and a second layer having a wider area than the first layer in a deeper part, are laminated; a second diffusion layer for a photodiode formed by diffusing first conductive type impurities on the first layer of the first diffusion layer; a gate electrode formed on the first conductive type semiconductor layer at a location at a one-side edge of the first layer; and a second conductive type third diffusion layer formed on a surface of the first conductive type semiconductor layer on another side of the gate electrode on a side not containing the first layer at a specific interval perpendicular to the second layer. A complete depletion state occurs in the first diffusion layer to raise an electronic detection efficiency due to a photoelectric effect. COPYRIGHT: (C)2004,JPO
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