| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming the multilayer metal wiring of a semiconductor element. SOLUTION: The method of forming the multilayer metal wiring of a semiconductor element comprises a process to form a first low dielectric constant insulation film on a semiconductor substrate where lower metal wiring is formed and then leave a predetermined thickness in this film on the lower metal wiring by etching the film for planarization, a process to form an etching barrier layer on the first low dielectric constant insulation film, a process to form a second low dielectric constant insulation film on the etching barrier layer, a process to form an oxide film on the second low dielectric constant insulation film, a process to etch, in a photoetching process, the oxide film, second low dielectric constant insulation film and etching barrier layer to form a via contact hole to expose the lower metal wiring, a process to form a bonding film/ diffusion preventing film on its entire surface including the via contact hole, and a process to form a contact plug for filling the via contact hole in order to form upper metal wiring connected to the contact plug. COPYRIGHT: (C)2004,JPO
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