发明名称 METHOD OF MANUFACTURING ELECTRONIC DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method of an electronic device for removing a metal bonded to the surface and sidewalls of wiring, a polymer caused by a resist and the residue of an alteration layer without thinning the wiring by etching, in post-treatment by which wiring constituted of aluminum or an aluminum alloy is formed by reactive-ion etching. SOLUTION: The manufacturing method includes a process for forming a wiring material layer formed of aluminum or an aluminum alloy on the surface of an insulating film on a wafer, a process for patterning the wiring material layer by reactive-ion etching with a resist pattern as a mask and a process for treating the surface of the insulating film including wiring with an aqueous solution for removing an etching residues, which includes peroxosulfate, compounds including fluorine and an acid for adjusting pH and whose range of a pH value is -1 to 3. COPYRIGHT: (C)2004,JPO
申请公布号 JP2003282531(A) 申请公布日期 2003.10.03
申请号 JP20020087050 申请日期 2002.03.26
申请人 TOSHIBA CORP 发明人 UEMATSU IKUO;HAYAMIZU NAOYA
分类号 H01L21/3065;G02F1/1362;H01L21/306;H01L21/3213;H01L21/336;H01L29/49;(IPC1-7):H01L21/306 主分类号 H01L21/3065
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