Internal electrode type plasma processing apparatus and plasma processing method

摘要

A plasma processing apparatus is of an internal electrode type, and an inductive coupling type electrode arranged facing a substrate 17 has a shape formed by bending back a conductor at its central portion. A high frequency power is supplied to an end of the electrode so that a standing wave of half wavelength are produced at straight portions formed by bending back the electrode to make an antinode there, and thus a plasma discharge is generated around the electrode. The controlled standing waves with its antinodes positively generated at the straight portions of the electrode are effectively used. The frequency f of the high frequency power is determined by f=(c/{square root}{square root over ( epsilp)/2L1 , where c is the speed of light, L1 is the length of the portion formed by bending back the electrode, and epsilp is the relative dielectric constant of plasma produced around the electrode. The standing waves are positively used to control distribution of density of the plasma in a good situation, and the configuration of the electrode is designed considering the plasma parameters around the electrode.