| 摘要 |
An electron beam exposure system for exposing a pattern on a wafer using a plurality of electron beams, comprising a section for generating a plurality of electron beams, an electron lens section having a plurality of apertures for passing a plurality of electron beams and focusing the plurality of electron beams independently, and a magnetic field formation section provided at least one of the plurality of apertures and forming a magnetic field in a direction substantially perpendicular to the irradiating direction of an electron beam passing through the aperture.
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