发明名称 |
Polysilicon evaluating method, polysilicon inspection apparatus and method for preparation of thin film transistor |
摘要 |
The state of a polysilicon film formed by excimer laser annealing an amorphous silicon film is to be evaluated. When the amorphous silicon film is annealed to form a polysilicon film, linearity or periodicity presents itself in the spatial structure of the film surface of the polysilicon film formed depending on the energy applied to the amorphous silicon during annealing. This linearity or periodicity is processed as an image and represented numerically from the image by exploiting the linearity or periodicity. The state of the polysilicon film is checked based on the numerical results.
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申请公布号 |
US2003183853(A1) |
申请公布日期 |
2003.10.02 |
申请号 |
US20030394223 |
申请日期 |
2003.03.24 |
申请人 |
WADA HIROYUKI;HIRATA YOSHIMI;TAGUCHI AYUMU;TATSUKI KOICHI;UMEZU NOBUHIKO;KUBOTA SHIGEO;ABE TETSUO;OOSHIMA AKIFUMI;HATTORI TADASHI;TAKATOKU MAKOTO;SUGANO YUKIYASU |
发明人 |
WADA HIROYUKI;HIRATA YOSHIMI;TAGUCHI AYUMU;TATSUKI KOICHI;UMEZU NOBUHIKO;KUBOTA SHIGEO;ABE TETSUO;OOSHIMA AKIFUMI;HATTORI TADASHI;TAKATOKU MAKOTO;SUGANO YUKIYASU |
分类号 |
H01L21/263;H01L21/66;(IPC1-7):H01L31/032 |
主分类号 |
H01L21/263 |
代理机构 |
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