| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem of the need for boron carbide with controlled crystallinity and particle diameters, that doped with impurities, nano particles and nano composite materials derived therefrom or the like which are not cheaply and easily obtained by conventional manufacturing methods of boron carbide such as thermal reduction and CVD (chemical vapor deposition) methods which bring about mixed impurities and low yields. <P>SOLUTION: The method for manufacturing boron carbide is characterized in dissolving a saccharide as a carbon source and boric acid or boron oxide as a boron source in a solvent, subsequently removing the solvent to form mixed powder of the carbon and boron sources, heating and making the powder react at 200-1, 100°C to generate an amorphous substance composed of B-O-C bonded body and successively heating the precursor at 1,300°C or higher, so as to obtain B<SB>4</SB>C crystalline body. <P>COPYRIGHT: (C)2004,JPO |
