发明名称 Circuit structure and semiconductor integrated circuit
摘要 A bypass capacitor having a given capacitance is arranged on the power/ground line adjacently to a driver circuit in a chip to reduce an effect of transient phenomenon at switching. The capacitance of the bypass capacitor is preset so as to be larger than a parasitic capacitance of the driver circuit to prevent the characteristic impedance of the power/ground line from being higher than the characteristic impedance of internal wiring.
申请公布号 US2003184311(A1) 申请公布日期 2003.10.02
申请号 US20030348896 申请日期 2003.01.23
申请人 发明人 OTSUKA KANJI;SUGA TADATOMO;USAMI TAMOTSU
分类号 H01L21/822;H01L21/82;H01L23/522;H01L23/64;H01L27/04;H01L27/08;H03K19/00;H03K19/0175;(IPC1-7):H01H31/04 主分类号 H01L21/822
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