Half tone phase mask, used in the production of integrated circuits comprises, a half tone region having a strongly reduced transmission and a phase-rotating property based on a neighboring second region which is transparent to light

摘要

Half tone phase mask comprises a half tone region (A) having a strongly reduced transmission and a phase-rotating property based on a neighboring second region (B) which is transparent to light. A phase rotation occurs in the transparent region through a corresponding path when light passes through the path of the absorber thickness in the first region. Independent claims are also included for the following: (1) process for the production of a half tone phase mask; and (2) process for the production of an alternating phase mask.