发明名称 Wafer metrology apparatus and method
摘要 This invention is an apparatus for imaging metrology, which in particular embodiments may be integrated with a processor station such that a metrology station is apart from but coupled to a process station. The metrology station is provided with a first imaging camera with a first field of view containing the measurement region. Alternate embodiments include a second imaging camera with a second field of view. Preferred embodiments comprise a broadband ultraviolet light source, although other embodiments may have a visible or near infrared light source of broad or narrow optical bandwidth. Embodiments including a broad bandwidth source typically include a spectrograph, or an imaging spectrograph. Particular embodiments may include curved, reflective optics or a measurement region wetted by a liquid. In a typical embodiment, the metrology station and the measurement region are configured to have 4 degrees of freedom of movement relative to each other.
申请公布号 US2003184742(A1) 申请公布日期 2003.10.02
申请号 US20030397917 申请日期 2003.03.26
申请人 STANKE FRED E.;CARLISLE CLINTON B.;PHAM HUNG;TONG EDRIC;RUTH DOUGLAS E.;CAHILL JAMES M.;WEBER-GRABAN MICHAEL;BURKE ELLIOT 发明人 STANKE FRED E.;CARLISLE CLINTON B.;PHAM HUNG;TONG EDRIC;RUTH DOUGLAS E.;CAHILL JAMES M.;WEBER-GRABAN MICHAEL;BURKE ELLIOT
分类号 B24B49/12;G01B11/06;G01B11/30;G01N21/21;G01N21/95;H01L21/66;H01L21/67;(IPC1-7):G01N21/00;G01N21/88 主分类号 B24B49/12
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