Semiconductor memory device and drive method therefor

摘要

The semiconductor memory device of the invention includes at least three memory cell blocks arranged in a word line direction. Each of the memory cell blocks includes a plurality of memory cells arranged in a bit line direction. Each of the memory cells includes a ferroelectric capacitor for storing data by displacement of polarization of a ferroelectric film and a selection transistor connected to one of paired electrodes of the ferroelectric capacitor. Each of the memory cell blocks also includes: a bit line, a sub-bit line and a source line extending in the bit line direction; and a read transistor having a gate connected to one end of the sub-bit line, a source connected to the source line, and a drain connected to one end of the bit line. The read transistor reads data by detecting the displacement of the polarization of the ferroelectric film of the ferroelectric capacitor of a data read memory cell from which data is read among the plurality of memory cells. The sub-bit lines of any two of the memory cell blocks are connected to each other via a sub-bit line coupling switch.