| 摘要 |
<p>The present invention is generally directed to doping methods for fully-depleted SOI structures, and a device comprising such resulting doped regions. In one illustrative embodiment, the device comprises a transistor formed above a silicon-on-insulator substrate comprised of a bulk substrate (30A), a buried oxide layer (30B) and an active layer (30C), the transistor being comprised of a gate electrode (36), the bulk substrate (30A) being doped with a dopant material at a first concentration level. The device further comprises a first doped region (42A) formed in the bulk substrate (30A), the first doped region (42A) being doped with a dopant material that is the same type as the bulk substrate dopant material, wherein the concentration level of dopant material in the first doped region (42A) is greater than the first dopant concentration level in the bulk substrate (30A), the first doped region (42A) being substantially aligned with the gate electrode (36).</p> |
