SEMICONDUCTOR DEVICE HAVING HIGH PRESSURE RESISTANT STRUCTURE

摘要

PURPOSE: A semiconductor device having a high pressure resistant structure is provided to be capable of obtaining an electrode pattern capable of lessening the electric field convergence at a corner portion using an electrode mask. CONSTITUTION: A semiconductor device having a high pressure resistant structure includes the first electrode(42). At this time, the first electrode includes a junction surface(10) between impurity regions and a spherical junction surface(42a) located at the corner portion of the semiconductor device. The spherical junction surface is protruded to the corner direction. The semiconductor device further includes the second electrode(50) isolated from the first electrode. The second electrode includes an impurity region for enclosing the junction surface.