| 摘要 |
<p>PROBLEM TO BE SOLVED: To form an alignment mark capable of receiving a high-strength detection signal of an alignment mark by preventing an mask alignment from increasing deviation even under a progress in the micro device manufacture. SOLUTION: An etching using a mask of the first mask pattern 12M consisting of a pattern for an alignment mark and a pattern for an element division formed by the same mask makes it possible to form a step as an alignment mark and a trench 14 as an element separation recess, and an etching using a mask of the second mask pattern 15M having an opening pattern with the above-mentioned step selectively exposed makes it possible to enlarge the above-mentioned step.</p> |
