| 摘要 |
PURPOSE: A method for forming a bit line contact hole of a semiconductor device is provided to be capable of simultaneously forming the bit line contact hole at a cell and peripheral region by differently forming a word line hard mask at the cell and peripheral region. CONSTITUTION: After sequentially forming a word line layer(230) and the first nitride layer(240) at the upper portion of a semiconductor substrate(210) defined with a cell and peripheral region, an oxide layer(250) and the second nitride layer(270) are formed at the peripheral and cell region, respectively. A word line mask pattern is then formed by partially removing the first and second nitride layer of the cell region, and the first nitride layer and the oxide layer of the peripheral region. A word line is then formed by etching the word line layer using the word line mask pattern. A spacer is formed at both sidewalls of the word line.
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