| 发明名称 |
Memory architecture with refresh and sense amplifiers |
| 摘要 |
An improved memory architecture is described. The memory architecture includes separately controlled refresh and sense amplifiers to enable a memory access and refresh cycle simultaneously.
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| 申请公布号 |
US6628541(B2) |
申请公布日期 |
2003.09.30 |
| 申请号 |
US20020131364 |
申请日期 |
2002.04.24 |
| 申请人 |
INFINEON TECHNOLOGIES AKTIENGESELLSCHAFT |
发明人 |
JAIN RAJ KUMAR |
| 分类号 |
G11C11/405;G11C11/406;G11C11/4091;H01L21/8242;H01L27/108;H01L27/11;(IPC1-7):G11C11/40 |
主分类号 |
G11C11/405 |
| 代理机构 |
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