| 摘要 |
A gas sensor having a pn junction including two discrete electrical conductive-type layers, namely, a first semiconductor layer and a second semiconductor layer, disposed in contact with each other. Ohmic electrodes are formed on the respective surfaces of the semiconductor layers. A catalytic layer containing a metallic catalytic component which dissociates hydrogen atom from a molecule having hydrogen atom is formed on one of the ohmic electrodes. The pn junction diode-type gas sensor has a simple constitution, exhibits a small change in diode characteristics with time in long-term service and is capable of detecting a gas concentration of a molecule having a hydrogen atom, for example, H2, NH3, H2S, a hydrocarbon and the like, contained in a sample gas.
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