A new material is proposed which is created by replacing in SiON silicon atoms partially by atoms of a penta- or hexavalent element, or by incorporating mono- or divalent metals interstitially. The thereby introduced electron-donating element is attracted to the nitrogen site and stabilizes it in its two fold coordinated, and therefore negatively charged form. In this form, the hydrogen affinity of the nitrogen atoms is reduced if not completely eliminated. The achieved destabilization of hydrogen bound to nitrogen reduces the optical losses due to NH absorption.
申请公布号
WO9944937(A1)
申请公布日期
1999.09.10
申请号
WO1998IB01017
申请日期
1998.07.01
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION;BLOECHL, PETER;GERMANN, ROLAND;OFFREIN, BERT, JAN;MASSAREK, ILANA;SALEMINK, HUUB, L.
发明人
BLOECHL, PETER;GERMANN, ROLAND;OFFREIN, BERT, JAN;MASSAREK, ILANA;SALEMINK, HUUB, L.