| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide in a simplified way a pn junction type compound semiconductor light emitting device presenting multi-wavelength luminescence. <P>SOLUTION: In a light emitting device having a first barrier layer made of an undoped first conduction type boron phosphide semiconductor formed on a substrate and a light emitting layer, formed on the first barrier layer and constituted of a plurality of layers of group III nitride semiconductors different in band gaps and overlapping each other, the light emitting layer constituting layer nearest to the first barrier layer is made of a group III nitride semiconductor including phosphorus P. <P>COPYRIGHT: (C)2003,JPO |
