OXIDE SEMICONDUCTOR LAYER, METHOD OF FORMING THE SAME, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an oxide semiconductor layer whose adhesion is improved and whose variation in conductivity with time is reduced.

SOLUTION: This oxide semiconductor layer is an oxide semiconductor layer 12 mainly composed of Sr and Cu, and includes an element (for example, Ar) whose reactivity with Sr and Cu is low.

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