| 摘要 |
PROBLEM TO BE SOLVED: To provide an ion implantation device capable of preventing insulation failure by restraining temperature drop of an arc chamber during halt of plasma. SOLUTION: This ion implantation device 100 is composed by structuring a mechanism from an ion source part 101 through a beam line part 102 to an end station part 103. The source part 101 is equipped with the arc chamber 11, a lead-out electrode 16 and a mass spectrograph 18. A filament 13 supported by insulators 12 is installed in the arc chamber 11. For instance, a heater 14 is installed as a heating mechanism surrounding the arc chamber 11. The heater 14 has a function for previously heating the insulators 12 and the arc chamber 11 in the halt of plasma of the arc chamber 11. COPYRIGHT: (C)2003,JPO
|
