| 摘要 |
PROBLEM TO BE SOLVED: To prevent the degradation of the performance of a transistor caused by interface level rising due to the entry of nitrogen atoms that have been implanted in a silicon oxide film, reaching an interface between the film and a silicon substrate. SOLUTION: A substrate with a silicon oxide film formed thereon as a wafer is heated for a millisecond to centisecond by using a flash lamp, while supplying thereto gas that has been composed so as to contain nitrogen radicals by plasma irradiation. COPYRIGHT: (C)2003,JPO
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