| 摘要 |
PROBLEM TO BE SOLVED: To provide a copper electroplating method for a semiconductor wafer by which the adhesion of particles generated on the anode side in a plating solution at copper electroplating to a material to be plated such as the semiconductor wafer, can be prevented, a phosphorus-containing copper anode for the copper electroplating, and the semiconductor wafer with minimal particle stuking plated by using them. SOLUTION: In the copper electroplating method using a phosphorus- containing copper anode, the phosphorus-containing copper anode having >1,500 to 20,000μm grain size is used. COPYRIGHT: (C)2003,JPO
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