| 摘要 |
A composition of an Ag alloy film as a thin film for electronic devices and target material to form thereof by a sputtering process are disclosed. The Ag alloy film consists of 0.1 to 0.5 atomic % of any one element selected from the group of Sm, Dy and Tb, 0.1 to 1.0 atomic % in total of at least one element selected from the group of Au and Cu, and the balance of Ag and incidental impurities. The Ag alloy film may be used as a wiring film or a reflective film for flat panel display devices. The sputtering-target material for forming the Ag alloy film consists of 0.1 to 0.5 atomic % of any one element selected from the group of Sm, Dy and Tb, 0.1 to 1.0 atomic % in total of at least one element selected from the group of Au and Cu, and the balance of Ag and incidental impurities. |
