发明名称 LASER ASSISTED DIRECT IMPRINT LITHOGRAPHY
摘要 <p>In accordance with the invention, features can be directly imprinted into the surface of a solid substrate. Specifically, a substrate is directly imprinted with a desired pattern by the steps of providing a mold (20) having a molding surface (21) to imprint the pattern, disposing the molding surface adjacent or against the substrate (24) surface (25) to be imprinted, and irradiating the substrate surface with radiation to soften or liquefy the surface. The molding surface is pressed into the softened or liquefied surface to directly imprint the substrate. The substrate can be any one of a wide variety of solid materials such as semiconductors, metals, or polymers. In a preferred embodiment the substrate is silicon, the laser is a UV laser, and the mold is transparent to the UV radiation to permit irradiation of the silicon workpiece through the transparent mold. Using this method, applicants have directly imprinted into silicon large area patterns with sub-10 nanometer resolution in sub-250 nanosecond processing time. The method can also be used with a flat molding surface to planarize the substrate.</p>
申请公布号 WO2003079416(P1) 申请公布日期 2003.09.25
申请号 US2003008293 申请日期 2003.03.17
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