Semiconductor device and method of manufacturing same

摘要

A method of manufacturing a semiconductor device include a step of forming an insulating layer, which is obtained by building up a first oxide film, a nitride film and a second oxide film on a substrate in the order mentioned, and a Salicide step of forming a Salicide-structure gate electrode on the insulating film. A silicidation reaction between the substrate surface and an N+ diffusion region is prevented in the Salicide step by causing the insulating layer to remain even in a region on the substrate besides that immediately underlying the gate electrode.