| 摘要 |
PROBLEM TO BE SOLVED: To enable a level shifter to be enhanced in reliability by a method, wherein a bias voltage applied to a MOSFET is lessened. SOLUTION: A first isolation region 14 and a second isolation region 8 are formed inside the top surface of a P substrate 13, a source 5c, a channel 15, and a drain 5b are formed inside the first isolation region 14, and a gate 5a is arranged on the channel region 15 for formation of an NMOSFET 5. A high potential part, such as a pinch resistor 3 of high breakdown voltage or the like, is arranged in the second isolation region 8 isolated from the first isolation region 14, and the NMOSFET 5 is connected to the high potential part with wires 18a and 18b. |
