发明名称 VACUUM PROCESSING APPARATUS AND SUBSTRATE ERECTING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a vacuum processing apparatus wherein an erected substrate is processed, further a multi-layer film is formed in the same vacuum vessel. SOLUTION: Since a substrate is erected upright by a substrate erecting device 31 so that substrate surfaces are arranged parallel and counterposed respectively to cathodes 82 and 81 while in first and second upright attitudes, so that with a substrate holder 32 in the first upright position, an Al target provided at one cathode 81 is sputtered to the substrate surface for film-forming an Al film, and then with the substrate holder 32 in the second upright position, the other cathode 82 is sputtered to the substrate surface for film-forming a Ti film on the substrate surface. Thus in a single vacuum vessel 11, a two-layer film of Ti and Al is film-formed on the substrate surface. So, the space occupied by a film-forming chamber is reduced by that amount, for improved throughput.
申请公布号 JP2000286321(A) 申请公布日期 2000.10.13
申请号 JP19990095417 申请日期 1999.04.01
申请人 ULVAC JAPAN LTD 发明人 SUESHIRO SEISUKE;SATO SHIGEMITSU;OZORA HIROKI
分类号 H01L21/677;C23C14/50;C23C14/56;H01L21/203;H01L21/68;H01L21/683;(IPC1-7):H01L21/68 主分类号 H01L21/677
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